Datasheet ON Semiconductor MTP50P03HDLG — 数据表

MTP50P03HDLG
Power MOSFET
50 Amps, 30 Volts, Logic Level P−Channel
TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. www.onsemi.com 50 AMPERES, 30 VOLTS
RDS(on) = 25 mW
P−Channel Features D • Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• These are Pb−Free Devices* G
S MARKING DIAGRAM
& PIN ASSIGNMENT MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit Drain−Source Voltage VDSS 30 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms) VGS …