Datasheet NIF5003NT1G - ON Semiconductor SMART MOSFET, N, 42 V, 1.25 W, SOT-223 — 数据表

ON Semiconductor NIF5003NT1G

Part Number: NIF5003NT1G

详细说明

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 42 V, 1.25 W, SOT-223

Docket:
NIF5003N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 14 A, Single N-Channel, SOT-223
HDPlusTM devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features.

Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.

Specifications:

Avalanche Single Pulse Energy Eas: 233mJ
Clamping Voltage Vc Max: 42 V
Continuous Drain Current Id: 14 A
Current Id Max: 14 A
Drain Source Voltage Vds: 42 V
Mounting Type: SMD
Number of Pins: 3
On State Resistance: 53 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-223
Pin Configuration: 1(G), 2(D), 3(S), 4-TAB(D)
Power Dissipation Pd: 1.25 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: SOT-223
Transistor Polarity: N Channel
Voltage Vds Typ: 42 V
Voltage Vgs Max: 14 V DC
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2.2 V
Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7
Roth Elektronik - RE901