Datasheet NIF9N05CLT1G - ON Semiconductor SMART MOSFET, N, 52 V, 1.69 W, SOT-223 — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 52 V, 1.69 W, SOT-223

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Simulation Model

Specifications:

• Avalanche Single Pulse Energy Eas: 110mJ
• Clamping Voltage Vc Max: 52 V
• Continuous Drain Current Id: 2.6 A
• Current Id Max: 2.6 A
• Drain Source Voltage Vds: 52 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 125 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Pin Configuration: 1(G), 2(D), 3(S), 4-TAB(D)
• Power Dissipation Pd: 1.69 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.75 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 52 V
• Voltage Vgs Max: 15 V DC
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1.3 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE901