Datasheet MMSF3P02HDR2G - ON Semiconductor P CHANNEL MOSFET, -20 V, 5.6 A, SOIC — 数据表

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Manufacturer: ON Semiconductor

Description: P CHANNEL MOSFET, -20 V, 5.6 A, SOIC

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Docket:
MMSF3P02HD
Preferred Device
Power MOSFET 3 Amps, 20 Volts
P-Channel SO-8
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Specifications:

• Continuous Drain Current Id: 5.6 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 60 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: P Channel

RoHS: Yes