Datasheet NID5004NT4G - ON Semiconductor SMART MOSFET, N, 36 V, 2.5 W, D-PAK — 数据表

ON Semiconductor NID5004NT4G

Part Number: NID5004NT4G

详细说明

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 36 V, 2.5 W, D-PAK

Docket:
NID5004N Self-Protected FET with Temperature and Current Limit
40 V, 6.5 A, Single N-Channel, DPAK
Selfprotected FETs are a series of power MOSFETs which utilize ON Semiconductor HDPlust technology.

The selfprotected MOSFET incorporates protection features such as integrated thermal and current limits. The self-protected MOSFETs include an integrated Drain-to-Gate Clamp that provides overvoltage protection from transients and avalanche. The device is protected from Electrostatic Discharge (ESD) by utilizing an integrated Gate-to-Source Clamp.
Features
VDSS (Clamped) 40 V

Specifications:

Avalanche Single Pulse Energy Eas: 273mJ
Clamping Voltage Vc Max: 44 V
Continuous Drain Current Id: 6.5 A
Current Id Max: 6.5 A
Drain Source Voltage Vds: 40 V
Mounting Type: SMD
Number of Pins: 3
On State Resistance: 110 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: DPAK
Pin Configuration: 1(G), 2(D), 3(S)
Power Dissipation Pd: 1.3 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Shutdown Temperature: 200°C
Threshold Voltage Vgs Typ: 1.85 V
Transistor Case Style: D-PAK
Transistor Polarity: N Channel
Voltage Vds Typ: 40 V
Voltage Vgs Max: 14 V DC
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2.2 V
Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

Fischer Elektronik - FK 244 08 D PAK
Fischer Elektronik - FK 244 13 D PAK
Fischer Elektronik - WLK 5