Datasheet RSQ030P03TR - Rohm MOSFET, P, 30 V, 3 A — 数据表
Part Number: RSQ030P03TR
详细说明
Manufacturer: Rohm
Description: MOSFET, P, 30 V, 3 A
Docket:
RSQ030P03
Transistor
4V Drive Pch MOS FET
RSQ030P03
Structure Silicon P-channel MOS FET External dimensions (Unit : mm)
Specifications:
- Continuous Drain Current Id: 3 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- On State Resistance: 90 MOhm
- Package / Case: TSMT6
- Power Dissipation Pd: 1.25 W
- Pulse Current Idm: 12 A
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: -2.5 V
- Transistor Case Style: TSMT
- Transistor Polarity: P Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: -30 V
- Voltage Vgs Rds on Measurement: 4 V
- Voltage Vgs th Max: -2.5 V
- Voltage Vgs th Min: -1 V
RoHS: Yes