Datasheet MTP10N10EL - ON Semiconductor MOSFET, N TO-220 — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: MOSFET, N TO-220

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Docket:
MTP10N10EL
Preferred Device
Power MOSFET 10 Amps, 100 Volts, Logic Level
N­Channel TO­220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain­to­source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · Source­to­Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature

Simulation Model

Specifications:

• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 220 MOhm
• On State Resistance: 220 MOhm
• Package / Case: TO-220AB
• Power Dissipation Pd: 40 W
• Pulse Current Idm: 35 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220AB
• Transistor Polarity: N Channel
• Voltage Vgs th Max: 2 V

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5