Datasheet NTD20N03L27G - ON Semiconductor MOSFET, N, D-PAK — 数据表

ON Semiconductor NTD20N03L27G

Part Number: NTD20N03L27G

详细说明

Manufacturer: ON Semiconductor

Description: MOSFET, N, D-PAK

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Docket:
NTD20N03L27 Power MOSFET
20 Amps, 30 Volts, N-Channel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package.

Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.
Features
http://onsemi.com

Simulation ModelSimulation Model

Specifications:

  • Avalanche Single Pulse Energy Eas: 288mJ
  • Continuous Drain Current Id: 20 A
  • Current Id Max: 20 A
  • Drain Source Voltage Vds: 30 V
  • Junction to Case Thermal Resistance A: 1.67°C/W
  • Mounting Type: SMD
  • Number of Pins: 3
  • On State Resistance: 27 MOhm
  • Package / Case: DPAK
  • Power Dissipation Pd: 74 W
  • Pulse Current Idm: 60 A
  • Rds(on) Test Voltage Vgs: 5 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1.6 V
  • Transistor Case Style: D-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 1.6 V
  • Voltage Vgs Rds on Measurement: 5 V
  • Voltage Vgs th Max: 2 V
  • Voltage Vgs th Min: 1 V

RoHS: Y-Ex

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