Datasheet STE70NM60 - STMicroelectronics MOSFET N CH 600 V 70 A ISOTOP — 数据表

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Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 70 A ISOTOP

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Docket:
STE70NM60
N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmeshTMPower MOSFET
TYPE STE70NM60 VDSS 600V RDS(on) < 0.055 ID 70 A
TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ISOTOP

Specifications:

• Continuous Drain Current Id: 30 A
• Current Id Max: 70 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Screw
• Number of Pins: 4
• On State Resistance: 50 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes