Datasheet STP23NM60N - STMicroelectronics MOSFET N CH 600 V 19 A TO-220 — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 19 A TO-220

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Docket:
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmeshTM Power MOSFET
Features
Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1.

Limited only by maximum temperature allowed

Specifications:

• Continuous Drain Current Id: 9.5 A
• Current Id Max: 19 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 150 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 35 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 25 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes