Datasheet STE40NC60 - STMicroelectronics MOSFET, N SOT-227 — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: MOSFET, N SOT-227

Specifications:

• Continuous Drain Current Id: 40 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• External Depth: 38 mm
• External Length / Height: 12.2 mm
• External Width: 25.4 mm
• Fall Time tf: 26 ns
• Fixing Centres: 30.1 mm
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Number of Transistors: 1
• On State Resistance: 135 MOhm
• On State resistance @ Vgs = 10V: 135 MOhm
• Package / Case: SOT-227B (ISOTOP)
• Power Dissipation Pd: 460 W
• Pulse Current Idm: 160 A
• Rate of Voltage Change dv / dt: 3V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 685 ns
• Rise Time: 42 ns
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-227B
• Transistor Polarity: N Channel
• Turn Off Time: 41 ns
• Turn On Time: 49 ns
• Voltage Vgs th Max: 4 V
• Voltage Vgs th Min: 2 V

RoHS: Y-Ex