Datasheet 2SK3569 - Toshiba MOSFET, N, 600 V, TO-220SIS — 数据表
Part Number: 2SK3569
详细说明
Manufacturer: Toshiba
Description: MOSFET, N, 600 V, TO-220SIS
Docket:
2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3569
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Specifications:
- Continuous Drain Current Id: 10 A
- Current Id Max: 10 A
- Drain Source Voltage Vds: 600 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On State Resistance: 750 MOhm
- Package / Case: TO-220SIS
- Power Dissipation Pd: 45 W
- Pulse Current Idm: 40 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: TO-220SIS
- Transistor Polarity: N Channel
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS