Datasheet Texas Instruments CSD16325Q5C — 数据表

CSD16325Q5C
www.ti.com SLPS237B – DECEMBER 2009 – REVISED APRIL 2010 DualCool™ N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5C FEATURES 1 2 PRODUCT SUMMARY DualCoolв„ў Package SON 5Г—6mm
Optimized for 2-Sided Cooling
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant and Halogen Free VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 18 nC Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Drain
Gate
Source
Top View
D D D D Bottom View
D
D
D 1.7 mΩ VGS = 8V 1.5 mΩ Threshold Voltage 1.1 S V Package Media CSD16325Q5C SON 5×6-mm Plastic
Package 13-Inch
Reel Qty Ship 2500 Tape and …