Datasheet Texas Instruments CSD16411Q3 — 数据表

制造商Texas Instruments
系列CSD16411Q3
零件号CSD16411Q3
Datasheet Texas Instruments CSD16411Q3

N通道NexFET™功率MOSFET 8-VSON-CLIP -55至150

数据表

CSD16411Q3 25-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 542 Kb, 修订版: B, 档案已发布: Nov 29, 2016
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin8
Package TypeDQG
Package QTY2500
CarrierLARGE T&R
Device MarkingCSD16411
Width (mm)3.3
Length (mm)3.3
Thickness (mm)1
Mechanical Data下载

参数化

ConfigurationSingle
ID, Silicon limited at Tc=25degC56 A
IDM, Max Pulsed Drain Current(Max)138 A
PackageSON3x3 mm
QG Typ2.9 nC
QGD Typ0.7 nC
RDS(on) Typ at VGS=4.5V12 mOhm
Rds(on) Max at VGS=10V10 mOhms
Rds(on) Max at VGS=4.5V15 mOhms
VDS25 V
VGS16 V
VGSTH Typ2 V

生态计划

RoHSCompliant
Pb FreeYes

设计套件和评估模块

  • Evaluation Modules & Boards: TPS2592AAEVM-531
    TPS2592AA 12-V eFuse Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)
  • Evaluation Modules & Boards: TPS2592BLEVM-531
    TPS2592BL 12-V eFuse Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

应用须知

  • Ringing Reduction Techniques for NexFET High Performance MOSFETs
    PDF, 1.4 Mb, 档案已发布: Nov 16, 2011

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor