CSD16413Q5A
www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16413Q5A FEATURES 1 2 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm Г— 6mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC
4.1 mΩ VGS = 10V 3.1 mΩ 1.6 V ORDERING INFORMATION
Device Package CSD16413Q5A SON 5 Г— 6 Plastic
Package APPLICATIONS 2.5
VGS = 4.5V Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control or Synchronous FET
Applications Media
13-inch reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
VALUE UNIT VDS Drain to Source Voltage 25 V DESCRIPTION VGS Gate to Source Voltage +16 / –12 V ID Continuous Drain Current, TC = 25°C 100 A The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications. Continuous Drain Current(1) 24 A IDM Pulsed Drain Current, TA = 25В°C(2) 156 A Top View PD Power Dissipation(1) 3.1 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 В°C EAS Avalanche Energy, single pulse …
