CSD17306Q5A
www.ti.com SLPS253A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17306Q5A FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) V
nC 2.4 nC VGS = 3V 4.2 mΩ VGS = 4.5V 3.3 mΩ VGS = 8V 2.9 mΩ Threshold Voltage 1.1 V ORDERING INFORMATION
Device Package Media CSD17306Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel APPLICATIONS Drain to Source On Resistance 30
11.8 Notebook Point of Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated DESCRIPTION Qty VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25В°C 100 A Continuous Drain Current(1) 24 A IDM Pulsed Drain Current, TA = 25В°C(2) 155 A PD Power Dissipation(1) 3.2 W ID S 1 8 D TJ, …
