Datasheet SI7404DN-T1-GE3 - Vishay MOSFET, N, POWERPAK — 数据表
Part Number: SI7404DN-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N, POWERPAK
Docket:
Si7404DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.013 at VGS = 10 V 30 0.015 at VGS = 4.5 V 0.022 at VGS = 2.5 V ID (A) 13.3 12.4 10.2
Specifications:
- Continuous Drain Current Id: 8.5 A
- Current Id Max: 8.5 A
- Current Temperature: 25°C
- Device Marking: SI7404DN
- Drain Source Voltage Vds: 30 V
- External Depth: 3.3 mm
- External Length / Height: 1.07 mm
- External Width: 3.3 mm
- Fall Time tf: 33 ns
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Junction to Case Thermal Resistance A: 1.9 °C/W
- Mounting Type: SMD
- N-channel Gate Charge: 20nC
- Number of Pins: 8
- On State Resistance Max: 13 MOhm
- On State Resistance: 13 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: 8-PowerPAK 1212
- Power Dissipation Pd: 1.5 W
- Pulse Current Idm: 40 A
- Rds(on) Test Voltage Vgs: 10 V
- Rise Time: 39 ns
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Polarity: N Channel
- Turn Off Time: 64 ns
- Turn On Time: 27 ns
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 1.5 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Min: 0.6 V
RoHS: Yes
Accessories:
- LICEFA - V11-7
- Roth Elektronik - RE932-01
其他名称:
SI7404DNT1GE3, SI7404DN T1 GE3