Datasheet IRFBE30SPBF - Vishay MOSFET, N, 800 V, 4.1 A, D2-PAK — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N, 800 V, 4.1 A, D2-PAK

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Docket:
PD - 94694
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
G
HEXFET® Power MOSFET
D

Specifications:

• Alternate Case Style: D2-PAK
• Continuous Drain Current Id: 4.1 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 1 °C/W
• Mounting Type: SMD
• On State Resistance: 1.2 Ohm
• On State resistance @ Vgs = 10V: 1.2 Ohm
• Package / Case: D2-PAK
• Power Dissipation Pd: 130 W
• Pulse Current Idm: 16 A
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vds: 600 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5