PDF, 106 Kb, 语言: en, 修订版: B, 文件上传: Mar 23, 2019, 页数: 7
P-Channel 60 V (D-S) 175 °C MOSFET
从文件中提取
SUP90P06-09L
Vishay Siliconix P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
-60 RDS(on) () ID (A)c 0.0093 at VGS = -10 V -90 0.0118 at VGS = -4.5 V -90 • TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC RoHS
COMPLIANT APPLICATIONS
• DC/DC Primary Switch TO-220AB
S G
Drain connected to Tab G D S
Top View D
P-Channel MOSFET Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)c TC = 25 °C
TC = 125 °C Pulsed Drain Current
Avalanche Current
a L = 0.1 mH Single Pulse Avalanche Energy
Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C
TA = 25 °C ID -67
-200 IAS -65 PD V -90 IDM
EAS Unit 211
250b
2.4 A mJ
W TJ, Tstg -55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS
Parameter …
