Datasheet SI4425BDY-T1-GE3 - Vishay P CH MOSFET — 数据表

详细说明

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

• Continuous Drain Current Id: -11.4 A
• Drain Source Voltage Vds: -30 V
• On Resistance Rds(on): 19 MOhm
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -400 mV
• Transistor Polarity: P Channel

RoHS: Y-Ex

其他名称:

SI4425BDYT1GE3, SI4425BDY T1 GE3