Datasheet SI4834CDY-T1-E3 - Vishay MOSFET, N, SO-8 — 数据表
Part Number: SI4834CDY-T1-E3
详细说明
Manufacturer: Vishay
Description: MOSFET, N, SO-8
Specifications:
- Continuous Drain Current Id: 7.5 A
- Current Id Max: 8 A
- Drain Source Voltage Vds: 30 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 22 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC
- Power Dissipation Pd: 1.1 W
- Rds(on) Test Voltage Vgs: 20 V
- Rise Time: 10 ns
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 3 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 3 V
- Voltage Vgs th Min: 0.8 V
RoHS: Yes
其他名称:
SI4834CDYT1E3, SI4834CDY T1 E3