Datasheet SI7491DP-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 18 A, SOIC — 数据表
Part Number: SI7491DP-T1-GE3
详细说明
Manufacturer: Vishay
Description: P CHANNEL MOSFET, -30 V, 18 A, SOIC
Specifications:
- Continuous Drain Current Id: 18 A
- Drain Source Voltage Vds: -30 V
- On Resistance Rds(on): 13 MOhm
- Rds(on) Test Voltage Vgs: -4.5 V
- Threshold Voltage Vgs Typ: -3 V
- Transistor Polarity: P Channel
RoHS: Y-Ex
其他名称:
SI7491DPT1GE3, SI7491DP T1 GE3