Datasheet SI2336DS-T1-GE3 - Vishay MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23 — 数据表
Part Number: SI2336DS-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23
Docket:
New Product
Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 4.3 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On State Resistance: 0.034 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.25 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Transistor Case Style: SOT-23
- Transistor Polarity: N Channel
- Voltage Vgs Max: 8 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
其他名称:
SI2336DST1GE3, SI2336DS T1 GE3