Datasheet SI4484EY-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC — 数据表
Part Number: SI4484EY-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC
Docket:
Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.034 at VGS = 10 V 0.040 at VGS = 6.0 V ID (A) 6.9 6.4
Specifications:
- Current Id Max: 6.9 A
- Drain Source Voltage Vds: 100 V
- Number of Pins: 8
- On State Resistance: 0.028 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 3.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Fischer Elektronik - FK 244 13 D2 PAK
- Vishay - SI7942DP-T1-E3
其他名称:
SI4484EYT1GE3, SI4484EY T1 GE3