Datasheet SI4484EY-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC — 数据表

Vishay SI4484EY-T1-GE3

Part Number: SI4484EY-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC

data sheetDownload Data Sheet

Docket:
Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.034 at VGS = 10 V 0.040 at VGS = 6.0 V ID (A) 6.9 6.4

Specifications:

  • Current Id Max: 6.9 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 8
  • On State Resistance: 0.028 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 3.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Vishay - SI7942DP-T1-E3

其他名称:

SI4484EYT1GE3, SI4484EY T1 GE3