Datasheet SI4812BDY-T1-GE3 - Vishay MOSFET+DIODE, N CH, 30 V, 7.3 A, SO8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET+DIODE, N CH, 30 V, 7.3 A, SO8

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Docket:
Si4812BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.016 at VGS = 10 V 0.021 at VGS = 4.5 V ID (A) 9.5 7.7

Specifications:

• Current Id Max: 7.3 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 13 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.4 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• EREM - 00SA
• MULTICORE (SOLDER) - 698840
• Roth Elektronik - RE932-01

其他名称:

SI4812BDYT1GE3, SI4812BDY T1 GE3