Datasheet SI7434DP-T1-GE3 - Vishay N CHANNEL MOSFET, 250 V, 3.8 A, SOIC — 数据表
Part Number: SI7434DP-T1-GE3
详细说明
Manufacturer: Vishay
Description: N CHANNEL MOSFET, 250 V, 3.8 A, SOIC
Docket:
Si7434DP
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 250 RDS(on) () 0.155 at VGS = 10 V 0.162 at VGS = 6 V ID (A) 3.8 3.7
Specifications:
- Continuous Drain Current Id: 3.8 A
- Drain Source Voltage Vds: 250 V
- On Resistance Rds(on): 162 MOhm
- Rds(on) Test Voltage Vgs: 6 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
- RoHS: Y-Ex
其他名称:
SI7434DPT1GE3, SI7434DP T1 GE3