Datasheet SIHP18N50C-E3В - Vishay MOSFET, N CH, W DIO, 500 V, 18 A, TO220AB — 数据表
Part Number: SIHP18N50C-E3В
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, W DIO, 500 V, 18 A, TO220AB
Docket:
SiHP18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 76 21 29 Single
Specifications:
- Continuous Drain Current Id: 18 A
- Drain Source Voltage Vds: 500 V
- Number of Pins: 3
- On State Resistance: 0.225 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 223 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Voltage Vgs Max: 30 V
RoHS: Yes
其他名称:
SIHP18N50CE3В , SIHP18N50C E3В