Datasheet SIJ458DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 60 A, PPAKSO8L — 数据表
Part Number: SIJ458DP-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 30 V, 60 A, PPAKSO8L
Docket:
New Product
SiJ458DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 35.5 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On State Resistance: 1800µ Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 5 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC PowerPAK
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Fairchild - FDS6900AS
- Fischer Elektronik - FK 244 13 D2 PAK
其他名称:
SIJ458DPT1GE3, SIJ458DP T1 GE3