Datasheet SIR800DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 20 V, 50 A, PPAKSO8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 20 V, 50 A, PPAKSO8

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Docket:
New Product
SiR800DP
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 35.4 A
• Drain Source Voltage Vds: 20 V
• Number of Pins: 8
• On State Resistance: 1900µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5.2 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 12 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK
• Vishay - SI9926CDY-T1-E3

其他名称:

SIR800DPT1GE3, SIR800DP T1 GE3