Datasheet SIR804DP-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 100 V, 60 A, PPAK8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 100 V, 60 A, PPAK8

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Docket:
New Product
SiR804DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 60 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 0.0059 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 104 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

其他名称:

SIR804DPT1GE3, SIR804DP T1 GE3