Datasheet SIS448DN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 35 A, PPAK1212-8 — 数据表
Part Number: SIS448DN-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 30 V, 35 A, PPAK1212-8
Docket:
New Product
SiS448DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 19 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On State Resistance: 4600µ Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 3.7 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK 1212
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Electrolube - SMA10SL
其他名称:
SIS448DNT1GE3, SIS448DN T1 GE3