Datasheet SIS456DN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 35 A, PPAK1212-8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 30 V, 35 A, PPAK1212-8

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Docket:
SiS456DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0051 at VGS = 10 V 0.0068 at VGS = 4.5 V ID (A)a 35 35 Qg (Typ.) 18.5 nC

Specifications:

• Current Id Max: 21 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 4200µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Electrolube - SMA10SL

其他名称:

SIS456DNT1GE3, SIS456DN T1 GE3