Datasheet SQ4850EY-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 60 V, 12 A, SO8 — 数据表
Part Number: SQ4850EY-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 60 V, 12 A, SO8
Docket:
SQ4850EY
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.022 0.031 12 Single
Specifications:
- Continuous Drain Current Id: 12 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 8
- On State Resistance: 0.017 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 6.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
其他名称:
SQ4850EYT1GE3, SQ4850EY T1 GE3