Datasheet SQ4850EY-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 60 V, 12 A, SO8 — 数据表

Vishay SQ4850EY-T1-GE3

Part Number: SQ4850EY-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 60 V, 12 A, SO8

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Docket:
SQ4850EY
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.022 0.031 12 Single

Specifications:

  • Continuous Drain Current Id: 12 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 8
  • On State Resistance: 0.017 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 6.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

其他名称:

SQ4850EYT1GE3, SQ4850EY T1 GE3