Datasheet SQJ840EP-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 30 V, 30 A, POPAK8L — 数据表
Part Number: SQJ840EP-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 30 V, 30 A, POPAK8L
Docket:
SQJ840EP
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
Specifications:
- Continuous Drain Current Id: 30 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On State Resistance: 0.0075 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 46 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
其他名称:
SQJ840EPT1GE3, SQJ840EP T1 GE3