Datasheet SQM110N05-06L-GE3 - Vishay MOSFET, N CH, W DIODE, 55 V, 110 A, TO-263 — 数据表
Part Number: SQM110N05-06L-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 55 V, 110 A, TO-263
Docket:
SQM110N05-06L
Vishay Siliconix
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 55 0.006 0.010 110 Single
Specifications:
- Continuous Drain Current Id: 110 A
- Drain Source Voltage Vds: 55 V
- Number of Pins: 3
- On State Resistance: 0.0047 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 157 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
其他名称:
SQM110N0506LGE3, SQM110N05 06L GE3