Datasheet SI4462DY-T1-GE3 - Vishay N CHANNEL MOSFET, 200 V, 1.5 A, SOIC — 数据表

详细说明

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 200 V, 1.5 A, SOIC

Specifications:

• Continuous Drain Current Id: 1.5 A
• Drain Source Voltage Vds: 200 V
• On Resistance Rds(on): 480 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

其他名称:

SI4462DYT1GE3, SI4462DY T1 GE3