Datasheet SI4842BDY-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 28 A, SOIC — 数据表
Part Number: SI4842BDY-T1-GE3
详细说明
Manufacturer: Vishay
Description: N CHANNEL MOSFET, 30 V, 28 A, SOIC
Docket:
Si4842BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0042 at VGS = 10 V 0.0057 at VGS = 4.5 V ID (A)a 28 29 nC 24 Qg (Typ.)
Specifications:
- Continuous Drain Current Id: 28 A
- Drain Source Voltage Vds: 30 V
- On Resistance Rds(on): 5.7 MOhm
- Rds(on) Test Voltage Vgs: 20 V
- Threshold Voltage Vgs Typ: 20 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
其他名称:
SI4842BDYT1GE3, SI4842BDY T1 GE3