Datasheet SI7478DP-T1-GE3 - Vishay N CHANNEL MOSFET, 60 V, 20 A, SOIC — 数据表
Part Number: SI7478DP-T1-GE3
详细说明
Manufacturer: Vishay
Description: N CHANNEL MOSFET, 60 V, 20 A, SOIC
Docket:
Si7478DP
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.0075 at VGS = 10 V 0.0088 at VGS = 4.5 V ID (A) 20 18.5
Specifications:
- Continuous Drain Current Id: 20 A
- Drain Source Voltage Vds: 60 V
- On Resistance Rds(on): 8.8 MOhm
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
其他名称:
SI7478DPT1GE3, SI7478DP T1 GE3