Datasheet SI1012R - Vishay MOSFET, N, SC-75A — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N, SC-75A

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Docket:
Si1012R/X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350

Simulation Model

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 500 mA
• Drain Source Voltage Vds: 20 V
• ESD HBM: 2 kV
• External Depth: 1.7 mm
• External Length / Height: 0.8 mm
• External Width: 1.6 mm
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• On Resistance Rds(on): 1.25 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-75
• Power Dissipation Pd: 150 mW
• Power Dissipation Ptot Max: 150 W
• Pulse Current Idm: 1 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: C
• Threshold Voltage Vgs Typ: 900 mV
• Transistor Case Style: SC-75
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 6 V
• Voltage Vgs Rds on Measurement: 1.8 V
• Voltage Vgs th Min: 0.45 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE901