Datasheet SI4894BDY-T1-E3 - Vishay MOSFET, N, SO-8 — 数据表

Vishay SI4894BDY-T1-E3

Part Number: SI4894BDY-T1-E3

详细说明

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Specifications:

  • Continuous Drain Current Id: 12 A
  • Current Id Max: 8.9 A
  • Drain Source Voltage Vds: 30 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • On Resistance Rds(on): 11 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC-8
  • Power Dissipation Pd: 1.4 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 10 ns
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

  • International Rectifier - IRF8714PBF
  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

其他名称:

SI4894BDYT1E3, SI4894BDY T1 E3