Datasheet SIE802DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — 数据表
Part Number: SIE802DF-T1-E3
详细说明
Manufacturer: Vishay
Description: MOSFET, N, POLAR PAK
Specifications:
- Base Number: 802
- Continuous Drain Current Id: 202 A
- Current Id Max: 60 A
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- N-channel Gate Charge: 50nC
- Number of Pins: 10
- On Resistance Rds(on): 1.9 MOhm
- On State Resistance @ Vgs = 4.5V: 2.6 MOhm
- On State resistance @ Vgs = 10V: 1.9 MOhm
- Package / Case: PolarPAK
- Power Dissipation Pd: 125 W
- Pulse Current Idm: 100 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 2.2 V
- Transistor Case Style: PolarPAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 2.2 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 3.7 V
- Voltage Vgs th Min: 1.5 V
RoHS: Yes
其他名称:
SIE802DFT1E3, SIE802DF T1 E3