Datasheet FDG6301N - Fairchild MOSFET, DUAL, N, SMD, 6-SC-70 — 数据表

Fairchild FDG6301N

Part Number: FDG6301N

详细说明

Manufacturer: Fairchild

Description: MOSFET, DUAL, N, SMD, 6-SC-70

Docket:
July 1999
FDG6301N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features

Specifications:

Continuous Drain Current Id, N Channel: 220 mA
Continuous Drain Current Id: 220 mA
Current Id Max: 220 mA
Drain Source Voltage Vds, N Channel: 25 V
Drain Source Voltage Vds: 25 V
Module Configuration: Dual
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on), N Channel: 2.6 Ohm
On Resistance Rds(on): 4 Ohm
Package / Case: SC-70
Power Dissipation: 300 mW
Rds(on) Test Voltage Vgs: 4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 850 mV
Transistor Case Style: SC-70
Transistor Polarity: N Channel
Voltage Vds Typ: 25 V
Voltage Vgs Max: 850 mV
Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes