Datasheet IRF9953PBF - International Rectifier MOSFET, DUAL, PP, LOGIC, SO-8 — 数据表
Part Number: IRF9953PBF
详细说明
Manufacturer: International Rectifier
Description: MOSFET, DUAL, PP, LOGIC, SO-8
Docket:
PD - 95477
IRF9953PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
Specifications:
- Continuous Drain Current Id: 2.3 A
- Current Id Max: -2.3 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- External Depth: 5.2 mm
- External Length / Height: 1.75 mm
- External Width: 4.05 mm
- Full Power Rating Temperature: 25°C
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 2
- On Resistance Rds(on): 250 MOhm
- Package / Case: SOIC
- Pin Configuration: c
- Pin Format: 1 S1
- Power Dissipation Pd: 2 W
- Pulse Current Idm: 10 A
- Rds(on) Test Voltage Vgs: -10 V
- Row Pitch: 6.3 mm
- SMD Marking: F9953
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Voltage Vds Typ: -30 V
- Voltage Vgs Max: -1 V
- Voltage Vgs Rds on Measurement: -10 V
RoHS: Yes
Accessories:
- Dow Corning - 2265931
- Fischer Elektronik - ICK SMD A 5 SA
- Fischer Elektronik - WLK 5
- Roth Elektronik - RE932-01