Datasheet NDS9956A - Fairchild MOSFET, DUAL, NN, LOGIC, SO-8 — 数据表

Fairchild NDS9956A

Part Number: NDS9956A

详细说明

Manufacturer: Fairchild

Description: MOSFET, DUAL, NN, LOGIC, SO-8

Docket:
February 1996
NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 3.7 A
Current Id Max: 3.7 A
Current Temperature: 25°C
Drain Source Voltage Vds: 30 V
External Depth: 5.2 mm
External Length / Height: 1.75 mm
External Width: 4.05 mm
Full Power Rating Temperature: 25°C
Module Configuration: Dual
Mounting Type: SMD
Number of Pins: 8
Number of Transistors: 2
On Resistance Rds(on): 80 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOIC
Pin Configuration: c
Power Dissipation Pd: 2 W
Pulse Current Idm: 15 A
Rds(on) Test Voltage Vgs: 10 V
Row Pitch: 6.3 mm
SMD Marking: NDS9956A
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: SOIC
Transistor Polarity: N Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Dow Corning - 2265931
Fischer Elektronik - ICK SMD A 5 SA
Fischer Elektronik - WLK 5