Datasheet PMGD780SN,115 - NXP MOSFET, N CH, TRENCH DL, 60 V, SOT363 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N CH, TRENCH DL, 60 V, SOT363

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Docket:
PMGD780SN
Dual N-channel TrenchMOS standard level FET
Rev.

02 -- 19 April 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id, N Channel: 490 mA
• Continuous Drain Current Id: 300 mA
• Current Id Max: 490 mA
• Drain Source Voltage Vds, N Channel: 60 V
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), N Channel: 0.78 Ohm
• On Resistance Rds(on): 920 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Power Dissipation: 410 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-363
• Transistor Polarity: Dual N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

其他名称:

PMGD780SN115, PMGD780SN 115