Datasheet US6M1TR - Rohm MOSFET, DUAL, NP, 2.5V/4V, TUMT6 — 数据表

详细说明

Manufacturer: Rohm

Description: MOSFET, DUAL, NP, 2.5V/4V, TUMT6

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Docket:
US6M1
Transistors
4V Drive Nch+Nch MOS FET
US6M1
Structure Silicon N-channel / P-channel MOS FET External dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 70 pF
• Continuous Drain Current Id: 1 A
• Current Id Max: 1.4 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 8 ns
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 380 MOhm
• Package / Case: TUMT6
• Power Dissipation: 1 W
• Pulse Current Idm: 4 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 6 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: TUMT
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Yes