Datasheet ZXMN3G32DN8TA - Diodes MOSFET, NN, SO-8 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, NN, SO-8

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Docket:
ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 30 RDS(on) () 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6
Description
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.

Specifications:

• Continuous Drain Current Id, N Channel: 7.1 A
• Continuous Drain Current Id: 7.1 A
• Current Id Max: 7.1 A
• Drain Source Voltage Vds, N Channel: 30 V
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on), N Channel: 0.028 Ohm
• On Resistance Rds(on): 28 MOhm
• On State Resistance @ Vgs = 4.5V: 45 MOhm
• On State resistance @ Vgs = 10V: 28 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation: 2.1 W
• Pulse Current Idm: 33.6 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes