Datasheet US6K1TR - Rohm MOSFET, DUAL, NN — 数据表

详细说明

Manufacturer: Rohm

Description: MOSFET, DUAL, NN

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Docket:
US6K1
Transistors
2.5V Drive Nch+Nch MOS FET
US6K1
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Continuous Drain Current Id: 1.5 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On Resistance Rds(on): 340 MOhm
• Package / Case: TUMT6
• Power Dissipation Pd: 1 W
• Pulse Current Idm: 6 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TUMT
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: 500 mV
• Voltage Vgs th Min: 1.5 V

RoHS: Yes