Datasheet PHKD6N02LT - NXP MOSFET, N, SO-8 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N, SO-8

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Docket:
PHKD6N02LT
Dual TrenchMOSTM logic level FET
M3D315
Rev.

02 -- 12 August 2003
Product data

Specifications:

• Continuous Drain Current Id: 10.9 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 20 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 4.17 W
• Pulse Current Idm: 44 A
• Row Pitch: 6.3 mm
• SMD Marking: PHKD6N02LT
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes