Datasheet FDR8508P - Fairchild MOSFET, DUAL, PP, SUPERSOT-8 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, SUPERSOT-8

Download Data Sheet

Docket:
FDR8508P
March 1999
FDR8508P
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description

Specifications:

• Continuous Drain Current Id: 3 A
• Current Id Max: -3 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 0.052 Ohm
• Package / Case: SuperSOT-8
• Power Dissipation Pd: 0.8 W
• Power Dissipation: 0.8 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: FDR8508P
• Threshold Voltage Vgs Typ: -1.8 V
• Transistor Case Style: Super-SOT
• Transistor Polarity: Dual P
• Transistor Type: MOSFET
• Voltage Vds Typ: -30 V
• Voltage Vds: 30 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -3 V

RoHS: Yes